- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄50005 > 2SK3993 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK3993 |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 封裝： | TO-251, MP-3, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 182K |
| 代理商： | 2SK3993 |
Data Sheet D17322EJ2V0DS
2
2SK3993
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 25 V, VGS = 0 V
10
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Gate Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.0
2.4
3.0
V
Forward Transfer Admittance
Note
| yfs |
VDS = 10 V, ID = 16 A
15
S
RDS(on)1
VGS = 10 V, ID = 32 A
2.7
3.8
m
Ω
Drain to Source On-state Resistance
Note
RDS(on)2
VGS = 5.0 V, ID = 16 A
4.1
7.8
m
Ω
Input Capacitance
Ciss
4770
pF
Output Capacitance
Coss
1000
pF
Reverse Transfer Capacitance
Crss
VDS = 10 V
VGS = 0 V
f = 1 MHz
690
pF
Turn-on Delay Time
td(on)
27
ns
Rise Time
tr
38
ns
Turn-off Delay Time
td(off)
107
ns
Fall Time
tf
VDD = 12.5 V, ID = 32 A
VGS = 10 V
RG = 10
Ω
54
ns
Total Gate Charge
QG
88
nC
Gate to Source Charge
QGS
16
nC
Gate to Drain Charge
QGD
VDD = 20 V
VGS = 10 V
ID = 64 A
30
nC
Body Diode Forward Voltage
Note
VF(S-D)
IF = 64 A, VGS = 0 V
0.91
V
Reverse Recovery Time
trr
IF = 64 A, VGS = 0 V
43
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/
μs
52
nC
Note Pulsed
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 μs
Duty Cycle
≤ 1%
τ
VGS
Wave Form
VDS
Wave Form
VGS
VDS
10%
0
90%
VGS
VDS
ton
toff
td(on)
tr
td(off)
tf
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3993-ZK | 64000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK4016 | 13 A, 600 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4021 | 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK4059TK-A | 0.26 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK4059TK-B | 0.37 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3993-ZK-E1-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3993-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:MOSFET - Tape and Reel |
| 2SK3993-ZK-E2-AY | 功能描述:MOSFET N-CH 25V MP-3ZK/TO-252 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3994(Q) | 制造商:Toshiba 功能描述:Nch 250V 20A 0.105@10V TO220NIS Bulk |
| 2SK3994(Q,T) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 20A TO220NIS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。