參數(shù)資料
型號： 2SK3940
元件分類： JFETs
英文描述： 70 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù)： 2/6頁
文件大?。?/td> 188K
代理商： 2SK3940
2SK3940
2005-04-22
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
±10
A
Drain cutoff current
IDSS
VDS = 75 V, VGS = 0 V
100
A
V (BR) DSS
ID = 10 mA, VGS = 0 V
75
V
Drain-source breakdown voltage
V (BR) DSX
ID = 10 mA, VGS = 20 V
45
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON-resistance
RDS (ON)
VGS = 10 V, ID = 35 A
5.6
7.0
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 35 A
45
90
S
Input capacitance
Ciss
12500
Reverse transfer capacitance
Crss
510
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
970
pF
Rise time
tr
20
Turn-on time
ton
50
Fall time
tf
30
Switching time
Turn-off time
toff
Duty <= 1%, tw = 10 s
160
ns
Total gate charge
(gate-source plus gate-drain)
Qg
200
Gate-source charge
Qgs
60
Gate-drain (“Miller”) charge
Qgd
VDD 60 V, VGS = 10 V,
ID = 70 A
85
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Marking
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
70
A
Pulse drain reverse current
(Note 1)
IDRP
280
A
Forward voltage (diode)
VDSF
IDR = 70 A, VGS = 0 V
1.5
V
Reverse recovery time
trr
75
ns
Reverse recovery charge
Qrr
IDR = 70 A, VGS = 0 V,
dIDR/dt = 50 A/s
110
nC
R
L
=1.
0
VDD 35 V
0 V
VGS
10 V
4.
7
ID = 35 A
VOUT
K3940
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料
PDF描述
2SK3943-ZP 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3979-TL 6 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP-FA 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP-FA 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3940(Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N)
2SK3943-ZP-E1-AY 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3944-TD-E 制造商:SANYO 功能描述:Nch 60V 2A 340m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 2A SOT89
2SK3947(Q) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS
2SK3977-TL-E 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0
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