參數(shù)資料
型號： 2SK3940
元件分類： JFETs
英文描述： 70 A, 75 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù)： 1/6頁
文件大?。?/td> 188K
代理商： 2SK3940
2SK3940
2005-04-22
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIII)
2SK3940
Switching Regulator, DC/DC Converter Applications
Motor Drive Applications
Low drain-source ON-resistance: RDS (ON) = 5.6 m (typ.)
High forward transfer admittance: |Yfs| = 90 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 75 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
75
V
Drain-gate voltage (RGS = 20 k)
VDGR
75
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
70
Drain current
Pulse
(Note 1)
IDP
280
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single-pulse avalanche energy
(Note 2)
EAS
444
mJ
Avalanche current
IAR
70
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
175
°C
Storage temperature range
Tstg
55~175
°C
Thermal Characteristics
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 135 H, IAR = 70 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
Note 4: The definition of maximum rating condition for both channel temperature and storage temperature range is
derived from AEC-Q101.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
―
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
相關(guān)PDF資料
PDF描述
2SK3943-ZP 82 A, 40 V, 0.0056 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3979-TL 6 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP-FA 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK3979TP-FA 6000 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3940(Q) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 75V 70A 3-Pin(3+Tab) TO-3PN Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 75V 70A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFER N-ch 75V 70A 150W TO-3P(N)
2SK3943-ZP-E1-AY 功能描述:MOSFET N-CH 40V MP-25ZP/TO-263 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件
2SK3944-TD-E 制造商:SANYO 功能描述:Nch 60V 2A 340m@10V PCP(SC62) Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 60V 2A SOT89
2SK3947(Q) 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220SIS
2SK3977-TL-E 制造商:SANYO 功能描述:Nch 100V 10A 92m@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 100V 10A TO251 制造商:Sanyo 功能描述:0
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