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參數資料
| 型號： | 2SK3979-TL |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 6 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | TP-FA, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 40K |
| 代理商： | 2SK3979-TL |
2SK3979
No. A0263-1/4
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0263
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
80906 / 12506PA MS IM TB-00001924
SANYO Semiconductors
DATA SHEET
2SK3979
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
200
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
6A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
24
A
Allowable Power Dissipation
PD
1W
Tc=25
°C20
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
200
V
Zero-Gate Voltage Drain Current
IDSS
VDS=200V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±24V, VDS=0V
±1
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
3.2
V
Forward Transfer Admittance
yfs
VDS=10V, ID=3A
2.1
3.5
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=3A, VGS=10V
320
450
m
Input Capacitance
Ciss
VDS=20V, f=1MHz
1090
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
85
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
35
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
17.5
ns
Rise Time
tr
See specified Test Circuit.
26
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
50
ns
Fall Time
tf
See specified Test Circuit.
42
ns
Marking : K3979
Continued on next page.
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