參數(shù)資料
型號： 2SK3932-01MR
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 11 A, 500 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220F, 3 PIN
文件頁數(shù)： 3/4頁
文件大?。?/td> 105K
代理商： 2SK3932-01MR
3
2SK3932-01MR
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
μ
A
V
Tch [
°
C]
0
10
20
30
40
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=11A,Tch=25
°
C
400V
250V
Vcc= 100V
10
-1
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00
0.25
0.50
0.75
VSD [V]
1.00
1.25
1.50
0.1
1
10
100
I
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
μ
s pulse test,Tch=25
°
C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t
ID [A]
0
25
50
75
100
125
150
0
50
100
150
200
250
300
350
400
450
500
I
AS
=4.4A
I
AS
=6.6A
I
AS
=11A
starting Tch [
°
C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=50V
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