參數(shù)資料
型號(hào): 2SK3929-01MR
廠商: FUJI ELECTRIC CO LTD
元件分類(lèi): JFETs
英文描述: N-CHANNEL SILICON POWER MOSFET
中文描述: 11 A, 600 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: TO-220F, 3 PIN
文件頁(yè)數(shù): 2/4頁(yè)
文件大小: 114K
代理商: 2SK3929-01MR
2
Characteristics
2SK3929-01MR
FUJI POWER MOSFET
0
25
50
75
100
125
150
0
10
20
30
40
50
60
70
80
Allowable Power Dissipation
PD=f(Tc)
P
Tc [
°
C]
0
5
10
15
20
25
0
4
8
12
16
20
24
20V
10V
7.5V
7V
6.5V
I
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
μ
s pulse test,Tch=25
°
C
VGS=6V
0
1
2
3
4
VGS[V]
5
6
7
8
9
10
0.01
0.1
1
10
I
Typical Transfer Characteristic
ID=f(VGS):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0.01
0.1
1
10
100
0.1
1
10
100
g
ID [A]
Typical Transconductance
gfs=f(ID):80
μ
s pulse test,VDS=25V,Tch=25
°
C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
R
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
μ
s pulse test,Tch=25
°
C
10V
20V
8V
7.5V
7.0V
VGS=6.5V
-50
-25
0
25
50
75
100
125
150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
R
Tch [
°
C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=5.5A,VGS=10V
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