參數(shù)資料
型號: 2SK3899-ZK
元件分類: JFETs
英文描述: 84 A, 60 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263, MP-25ZK, 3 PIN
文件頁數(shù): 3/7頁
文件大?。?/td> 281K
代理商: 2SK3899-ZK
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MOS FIELD EFFECT TRANSISTOR
2SK3899
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D17174EJ1V0DS00 (1st edition)
Date Published May 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3899 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
RDS(on)1 = 5.3 m
MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 6.5 m
MAX. (VGS = 4.5 V, ID = 42 A)
Low Ciss: Ciss = 5500 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±84
A
Drain Current (pulse)
Note1
ID(pulse)
±336
A
Total Power Dissipation (TC = 25°C)
PT1
146
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Energy
Note2
EAS
245
mJ
Repetitive Avalanche Current
Note3
IAR
49.5
A
Repetitive Avalanche Energy
Note3
EAR
245
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 30 V, RG = 25
, VGS = 20 → 0 V, L = 100 H
3. RG = 25
, Tch(peak) ≤ 150°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3899-ZK
TO-263 (MP-25ZK)
(TO-263)
相關PDF資料
PDF描述
2SK3902-ZK 30 A, 60 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
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