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參數(shù)資料
| 型號： | 2SK3907 |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 200K |
| 代理商： | 2SK3907 |
2SK3907
2005-02-17
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH
II π-MOSVI)
2SK3907
Switching Regulator Applications
Small gate charge: Qg = 60 nC (typ.)
Low drain-source ON resistance: RDS (ON) = 0.18 (typ.)
High forward transfer admittance: |Yfs| = 12 S (typ.)
Low leakage current: IDSS = 500 A (VDS = 500 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
500
V
Drain-gate voltage (RGS = 20 k)
VDGR
500
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
23
Drain current
Pulse (Note 1)
IDP
92
A
Drain power dissipation (Tc
= 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
552
mJ
Avalanche current
IAR
23
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
0.833
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
50
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.77 mH, IAR = 23 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
1. Gate
2. Drain (heatsink)
3. Source
1
3
2
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3907 | 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3911 | 20 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3912 | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-126 |
| 2SK3918-ZK | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3918 | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3907(Q) | 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3911(Q) | 制造商:Toshiba 功能描述:Nch 600V 20A 0.32@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 20A TO-3PN |
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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