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參數(shù)資料
| 型號： | 2SK3907 |
| 元件分類： | JFETs |
| 英文描述： | 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-16C1B, SC-65, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 200K |
| 代理商： | 2SK3907 |
2SK3907
2005-02-17
2
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
A
Gate-source breakdown voltage
V (BR) GSS
ID = ±10 A, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 500 V, VGS = 0 V
500
A
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
500
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 11.5 A
0.18
0.23
Forward transfer admittance
Yfs
VDS = 10 V, ID = 11.5 A
3.4
12
S
Input capacitance
Ciss
4250
Reverse transfer capacitance
Crss
10
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
420
pF
Rise time
tr
12
Turn-on time
ton
45
Fall time
tf
10
Switching time
Turn-off time
toff
80
ns
Total gate charge
Qg
60
Gate-source charge
Qgs
50
Gate-drain charge
Qgd
VDD 400 V, VGS = 10 V, ID = 23 A
10
nC
Source-Drain Ratings and Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
23
A
Pulse drain reverse current
(Note 1)
IDRP
92
A
Forward voltage (diode)
VDSF
IDR = 23 A, VGS = 0 V
-1.7
V
Reverse recovery time
trr
1350
ns
Reverse recovery charge
Qrr
IDR = 23 A, VGS = 0 V,
dIDR/dt = 100 A/s
24
C
Marking
RL =
17.4
0 V
10 V
VGS
VDD 200 V
ID = 11.5 A VOUT
4.7
Duty <= 1%, tw = 10 s
K3907
TOSHIBA
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3907 | 23 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3911 | 20 A, 600 V, 0.32 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3912 | 10000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-126 |
| 2SK3918-ZK | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3918 | 48000 mA, 25 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3907(Q) | 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 500V 23A 0.23@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 23A TO-3PN |
| 2SK3911(Q) | 制造商:Toshiba 功能描述:Nch 600V 20A 0.32@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 20A TO-3PN |
| 2SK3934 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N 500V TO-220SIS 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, 500V, TO-220SIS |
| 2SK3934(Q) | 制造商:Toshiba 功能描述:Nch 500V 15A 0.30@10V TO220SIS Bulk |
| 2SK3934(Q,M) | 功能描述:MOSFET MOSFET N-Ch, 500V, 15A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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