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參數(shù)資料
| 型號： | 2SK3879 |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 2SK3879 |
2SK3879
2011-04-25
5
0.001
0.01
0.1
1
10
0.00001 0.0001
0.001
0.01
0.1
1
10
0.1
0.05
0.02
0.01
SINGLE PULSE
Ｐ
ＤＭ
t
Ｔ
Ｄｕｔｙ=t/Ｔ
Ｒｔｈ（ｃｈ－ｃ）=1.56℃
duty=0.5
0.01
0.1
1
10
100
1
10
100
1000
１ｍｓ＊
ＶＤＳＳ ＭＡＸ．
１００μｓ＊
ＩＤ ＭＡＸ(ＰＵＬＳＥＤ)＊
ＩＤ ＭＡＸ(ＣＯＮＴＩＮＵＯＵＳ)
ＤＣ ＯＰＥＲＡＴＩＯＮ
Ｔｃ＝２５℃
＊ SINGLE NONREPETITIVE
PULSE Tc=25℃
Curves must be detaed
lineality with increase in
temperature.
0
50
100
150
200
250
300
350
400
25
50
75
100
125
150
PULSE WIDTH tw (s)
rth tw
EAS – Tch
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
NO
RMAL
IZED
TRANS
IE
N
T
H
E
R
MAL
IM
PE
DAN
C
E
r th
(t)
/R
th
(ch-c)
A
V
ALANCHE
E
N
E
R
GY
E
AS
(mJ)
15 V
TEST CIRCUIT
WAVE FORM
IAR
BVDSS
VDD
VDS
RG = 25 Ω
VDD = 90 V, L = 16.1 mH
=
VDD
BVDSS
2
I
L
2
1
ΕAS
SAFE OPERATING AREA
DRAIN
SOURCE VOLTAGE VDS (V)
DR
AIN
CURR
EN
T
I D
(A)
* SINGLE NONREPETITIVE PULSE
Tc = 25
°C
Curves must be derated linearly with
increase in temperature
ID MAX (PULSED) *
ID MAX (CONTINUOUS)
100
μs *
1 ms*
DC OPERATION
Tc = 25
°
Duty
= t/T
Rth (ch-c) = 1.56°C/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3879(TE24L，Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 6.5A TO220SM |
| 2SK3879-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK388 | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3880(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 800V 6.5A 3-Pin (3+Tab) TO-3P(N)IS Bulk |
| 2SK3891-01RSC | 制造商:Fuji Electric 功能描述: |
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