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參數(shù)資料
| 型號： | 2SK3879 |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 290K |
| 代理商： | 2SK3879 |
2SK3879
2011-04-25
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS
IV)
2SK3879
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 1.35 (typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100 μA (max) (VDS = 640 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
800
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
6.5
Drain current
Pulse
(Note 1)
IDP
19.5
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAS
375
mJ
Avalanche current
IAR
6.5
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 16.1 mH, RG = 25 Ω, IAR = 6.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
1
3
2
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| 2SK3879(TE24L，Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 6.5A TO220SM |
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| 2SK3880(F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 800V 6.5A 3-Pin (3+Tab) TO-3P(N)IS Bulk |
| 2SK3891-01RSC | 制造商:Fuji Electric 功能描述: |
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