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參數(shù)資料
| 型號： | 2SK3879 |
| 元件分類： | JFETs |
| 英文描述： | 6.5 A, 800 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 290K |
| 代理商： | 2SK3879 |
2SK3879
2011-04-25
2
(Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate-source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cutoff current
IDSS
VDS = 640 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
800
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
4.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 3.5 A
1.35
1.7
Ω
Forward transfer admittance
Yfs
VDS = 20 V, ID = 3.5 A
2.5
5.2
S
Input capacitance
Ciss
1500
Reverse transfer capacitance
Crss
25
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
140
pF
Rise time
tr
35
Turn-on time
ton
80
Fall time
tf
50
Switching time
Turn-off time
toff
220
ns
Total gate charge
(gate-source plus gate-drain)
Qg
35
Gate-source charge
Qgs
22
Gate-drain (“Miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6.5 A
13
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
6.5
A
Pulse drain reverse current
(Note 1)
IDRP
19.5
A
Forward voltage (diode)
VDSF
IDR = 6.5 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
1200
ns
Reverse recovery charge
Qrr
IDR = 6.5 A, VGS = 0 V,
dIDR/dt = 100 A/μs
11.5
μC
Marking
Duty
≤ 1%, tw = 10 μs
0 V
10 V
VGS
RL= 114 Ω
VDD ≈ 400 V
ID = 3.5 A
VOUT
50
Ω
Lot No.
(weekly code)
Note 4
K3879
Part No. (or abbreviation code)
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
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