參數(shù)資料
型號: 2SK3875-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: FUJI POWER MOSFET Super FAP-G Series
中文描述: 13 A, 900 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 4/4頁
文件大?。?/td> 112K
代理商: 2SK3875-01
4
http://www.fujielectric.co.jp/fdt/scd/
2SK3875-01
FUJI POWER MOSFET
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-2
10
-1
10
0
10
1
10
2
Single Pulse
Maximum Avalanche Current Pulsewidth
I
AV
=f(t
AV
):starting Tch=25
°
C,Vcc=100V
A
A
t
AV
[sec]
0
25
50
75
starting Tch [
°
C]
100
125
150
175
200
0
2
4
6
8
10
12
14
16
Repetitive
Non-Repetitive
(Single Pulse)
A
Maximum Avalanche Current vs. starting Tch
I(AV)=f(starting Tch):Vcc=100V
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
-3
10
-2
10
-1
10
0
10
1
(Maximum Transient Thermal Impedance)
(Zth(ch-c)=f(t):D=0)
(
t [sec]
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3875-01SC 制造商:Fuji Electric 功能描述:
2SK3876-01RSC 制造商:Fuji Electric 功能描述:
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2SK3878(F,T) 功能描述:MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 720V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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