參數(shù)資料
型號： 2SK3887-01
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-CHANNEL SILICON POWER MOSFET
中文描述： 9 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 93K
代理商： 2SK3887-01
1
TO-220AB
Item
Drain-source voltage
Symbol
V
DS
V
DSX
I
D
I
D(puls]
V
GS
I
AR
E
AS
Ratings
600
600
9
±36
±30
9
462.3
Unit Remarks
V
V
A
A
V
A
mJ
Note *2
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
E
AR
16.5
dV
DS
/dt
dV/dt
P
D
20
5
165
2.02
Operating and Storage
Temperature range
T
ch
T
stg
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
Item
2SK3887-01
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Super FAP-G Series
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V
V
GS
=0V
V
GS
I
D
=4.5A V
GS
=10V
I
D
=4.5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MH
V
CC
=300V I
D
=4.5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
600
3.0
V
V
μA
nA
S
pF
nC
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
0.758
62
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
V
SD
t
rr
Q
rr
Item
Drain-Source Breakdown Voltaget
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transcondutance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
on
Turn-Off Time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
= 250μA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
=600V V
ch
=25°C
=480V V
ch
=125°C
=±30V
DS
=0V
V
CC
=300V
I
D
=9A
V
GS
=10V
I
F
=9A V
GS
=0V T
ch
=25°C
I
F
=9A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
mJ
kV/μs
kV/μs
W
°C
°C
5.0
25
250
100
1.00
0.82
9.0
4.5
950
130
1425
195
6.0
16
6.0
33
5.5
25
10
8.0
1.10
860
7.0
9.0
24
9.0
50
8.3
38
15
12
1.50
Outline Drawings
(mm)
www.fujielectric.co.jp/fdt/scd
Equivalent circuit schematic
200406
V
GS
=-30V
Note *1
Note *3
V
DS
600V
Note *4
Tc=25°C
Ta=25°C
=
Features
High speed switching Low on-resistance
No secondary breadown Low driving power
Avalanche-proof
Applications
Switching regulators DC-DC converters
UPS (Uninterruptible Power Supply)
Gate(G)
Source(S)
Drain(D)
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,I
AS
=3.6A,L=65.4mH,
V
CC
=60V,R
G
=50
EAS limited by maximum channel temperature
and avalanch current.
See to the ‘Avalanche Energy’ graph
Note *3:Repetitive rating:Pulse width limited by
maximum channel temperature.
See to the ‘Transient Theemal impedance’
graph
Note *4:I
F
-I
D
, -di/dt=50A/μs,V
CC
BV
DSS
,Tc=
=
=
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