參數(shù)資料
型號(hào)： 2SK3740-ZK
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 169K
代理商： 2SK3740-ZK
Data Sheet D16913EJ1V0DS
2
2SK3740
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
30 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1.0 mA
2.5
3.5
4.5
V
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
7.0
15
S
Drain to Source On-state Resistance
Note
R
DS(on)
V
GS
= 10 V, I
D
= 10 A
0.12
0.16
Input Capacitance
C
iss
V
DS
= 10 V
1720
pF
Output Capacitance
C
oss
V
GS
= 0 V
330
pF
Reverse Transfer Capacitance
C
rss
f = 1.0 MHz
170
pF
Turn-on Delay Time
t
d(on)
V
DD
= 125 V, I
D
= 10 A
17
ns
Rise Time
t
r
V
GS
= 10 V
17
ns
Turn-off Delay Time
t
d(off)
R
G
= 0
49
ns
Fall Time
t
f
9
ns
Total Gate Charge
Q
G
V
DD
= 200 V
47
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
7
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 20 A
25
nC
V
F(S-D)
I
F
= 20 A, V
GS
= 0 V
0.91
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0 V
210
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
1.4
μ
C
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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2SK3740-ZK-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263
2SK3742 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(Q) 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(Q,M) 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(STA4,Q) 制造商:Toshiba America Electronic Components 功能描述:
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