參數(shù)資料
型號: 2SK3783
廠商: NEC Corp.
英文描述: N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM
中文描述: N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐
文件頁數(shù): 1/5頁
文件大?。?/td> 111K
代理商: 2SK3783
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
JUNCTION FIELD EFFECT TRANSISTOR
2SK3783
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No. D17002EJ1V0DS00 (1st edition)
Date Published April 2004 NS CP(K)
Printed in Japan
2004
DESCRIPTION
The 2SK3783 is suitable for converter of ECM.
FEATURES
High gain
0.5 dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Low noise
109 dB (V
DS
= 2.0 V, C = 5 pF, R
L
= 2.2 k
)
Super small area package
1006 TYP. lead less
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3783
4pXSLP04 (1006)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
=
1.0 V)
V
DSX
20
V
Gate to Drain Voltage
V
GDO
20
V
Drain Current
I
D
10
mA
Gate Current
I
G
10
mA
Total Power Dissipation
P
T
100
mW
Junction Temperature
T
j
125
°C
Storage Temperature
T
stg
55 to +125
°C
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
1.0
0
0.65
0
0
0
.
M
0.25
1
4
3
2
EQUIVALENT CIRCUIT
(Top View)
1: Source
2: Gate
3: Gate
4: Drain
1
4
2
3
相關(guān)PDF資料
PDF描述
2SK3793 SWITCHING N-CHANNEL POWER MOSFET
2SK3794 SWITCHING N-CHANNEL POWER MOSFET
2SK3794-Z SWITCHING N-CHANNEL POWER MOSFET
2SK3811 SWITCHING N-CHANNEL POWER MOSFET
2SK3811-ZP SWITCHING N-CHANNEL POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3788-01 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 21 Milliohms;ID 92A;TO-247;PD 410W;VGS +/-3
2SK3789-01RSC 制造商:Fuji Electric 功能描述:
2SK3793 制造商:Renesas Electronics Corporation 功能描述:
2SK3793-AZ 功能描述:MOSFET N-CH 100V MP-45F/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3796-2-TL-E 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流(Vgs=0 時的 Idss):50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel