參數(shù)資料
型號(hào)： 2SK3740-ZK
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開(kāi)關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 169K
代理商： 2SK3740-ZK
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3740
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16913EJ1V0DS00 (1st edition)
Date Published November 2003 NS CP(K)
Printed in Japan
2003
DESCRIPTION
The 2SK3740 is N-channel MOS FET device that
features a low on-state resistance and excellent
switching characteristics, designed for high voltage
applications such as lamp drive, DC/DC converter, and
actuator driver.
FEATURES
Gate voltage rating: ±30 V
Low on-state resistance
R
DS(on)
= 160 m
MAX. (V
GS
= 10
V, I
D
= 10 A)
Low gate charge
Q
G
= 47 nC TYP. (V
DD
= 200
V, V
GS
= 10
V, I
D
= 20
A)
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
250
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±30
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±20
A
I
D(pulse)
±60
A
Total Power Dissipation
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
100
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
20
A
E
AS
40
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 125 V, R
G
= 25
, V
GS
= 20
→
0 V, L = 100
μ
H
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
1.25
°C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3740-ZK
TO-263 (MP-25ZK)
(TO-263)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3740-ZK-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263
2SK3742 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(Q) 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(Q,M) 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(STA4,Q) 制造商:Toshiba America Electronic Components 功能描述:
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