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參數(shù)資料
| 型號(hào)： | 2SK3681-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 43 A, 600 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK3681-01 |
1
Item
Symbol
Ratings
Unit
Remarks
Drain-source voltage
VDS
600
VDSX
600
Continuous drain current
ID
±43
Pulsed drain current
ID(puls]
±172
Gate-source voltage
VGS
±30
Non-Repetitive
IAS
43
Maximum avalanche current
Repetitive or
IAR
21.5
Maximum avalanche current
Non-Repetitive
EAS
808.9
Maximum avalanche energy
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak diode recovery dV/dt
dV/dt
5
Max. power dissipation
PD
2.50
600
Operating and storage
Tch
+150
temperature range
Tstg
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3681-01
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=26A
VGS=10V
ID=21.5A
VDS=25V
VCC=300V ID=21.5A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
0.208
50.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID= 250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=43A
VGS=10V
L=802H Tch=25°C
IF=43A VGS=0V Tch=25°C
IF=43A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
600
3.0
5.0
25
250
10
100
0.12
0.16
15
30
5360
8040
680
1020
40
60
80
120
87
131
190
285
44
66
112
168
34
51
40
60
43
1.00
1.50
0.98
22.0
-55 to +150
Outline Drawings [mm]
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
200401
<
=
VGS=-30V
Tch=25°C
*1
Tch 150°C
*1
L=802H
VCC=60V *2
VDS 600V
*3
Ta=25°C
Tc=25°C
<
=
*1 See to Avalanche Current Graph
*2 See to Avalanche Energy Graph
*3 IF -ID, -di/dt=50A/s, VCC BVDSS, Tch 150°C
<
=
<
=
<
=
11.6±0.2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2SK3681-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-247 |
| 2SK3681-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3682-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 500V;RDS(ON) 0.29Ohm;ID +/-19A;TO-220AB;PD 270W;VGS +/-3 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3682-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3682-01SC | 制造商:Fuji Electric 功能描述: |
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