參數(shù)資料
型號(hào): 2SK3742
元件分類: JFETs
英文描述: Si, POWER, FET
封裝: LEAD FREE, 2-10U1B, SC-67, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 221K
代理商: 2SK3742
2SK3742
2005-01-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSIV)
2SK3742
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 2.2 Ω (typ.)
High forward transfer admittance: |Yfs| = 3.5 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 720 V)
Enhancement model: Vth = 4.0~5.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
900
V
Drain-gate voltage (RGS = 20 k)
VDGR
900
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
5
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
15
A
Drain power dissipation (Tc
= 25°C)
PD
45
W
Single pulse avalanche energy
(Note 2)
EAS
595
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
4.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
2.78
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
62.5
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 43.6 mH, IAR = 5.0 A, RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
1
3
2
相關(guān)PDF資料
PDF描述
2SK3891-01R 17 A, 700 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4005-01MR 6 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
2SK4018 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4021 4.5 A, 250 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK4040-01 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3742(Q) 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(Q,M) 功能描述:MOSFET N-Ch 900V 5A 45W PD Rdson 2.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3742(STA4,Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK3743(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK3744-TL-E 制造商:Sony Semiconductor Solutions Division 功能描述: