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參數(shù)資料
| 型號： | 2SK4018 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 100 V, 0.45 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-7B1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 444K |
| 代理商： | 2SK4018 |
2SK4018
2004-12-24
1
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (L
2πMOS V)
2SK4018
Chopper Regulator, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.28 (typ.)
High forward transfer admittance
: |Yfs| = 3.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
3
A
Drain current
Pulse (Note 1)
IDP
12
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
140
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 25 mH, RG = 25 , IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
０．６±０．１５
０．８ MAX．
２．
３±
０．
２
１２
３
１．1 MAX．
０．６±０．１５
０．６ MAX
０．６ MAX．
１．１±０．２
６．５±０．２
５．
５
±
０．
２
１．
５±
０．
２
２．３
５．
７
５．２±０．２
０．９
４．
１±
０
．
２
１．
６
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