參數(shù)資料
型號(hào): 2SK3663
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
中文描述: N溝道MOS場(chǎng)效應(yīng)晶體管開(kāi)關(guān)
文件頁(yè)數(shù): 3/6頁(yè)
文件大小: 60K
代理商: 2SK3663
Data Sheet D16529EJ1V0DS
3
2SK3663
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature -
°
C
P
T
0
0.04
0.08
0.12
0.16
0.2
0.24
0
25
50
75
100
125
150
175
Mounted on FR-4 board of
2500 mm
2
x 1.1 mm
T
A
- Ambient Temperature -
°
C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
0.4
0.8
1.2
1.6
2
0
0.4
0.8
1.2
1.6
Pulsed
2.5 V
V
GS
= 4.5 V
4.0 V
V
DS
- Drain to Source Voltage - V
I
D
0.0001
0.001
0.01
0.1
1
10
0
0.5
1
1.5
2
2.5
3
V
DS
= 10 V
Pulsed
T
A
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
G
0.4
0.6
0.8
1
1.2
1.4
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1.0 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
0.001
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
A
=
25
°
C
25
°
C
75
°
C
125
°
C
I
D
- Drain Current - A
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