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參數資料
| 型號： | 2SK3656 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, 2-5K1D, SC-62, 3 PIN |
| 文件頁數： | 2/5頁 |
| 文件大小： | 141K |
| 代理商： | 2SK3656 |
2SK3656
2007-11-01
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
PO
27.5
28.4
dBmW
Drain efficiency
ηD
50
64
%
Power gain
GP
VDS = 3.6 V,
Iidle = 50 mA (VGS = adjust),
f
= 470 MHz, Pi = 13dBmW,
15.4
dB
Threshold voltage
Vth
VDS = 3.6 V, ID =0.5 mA
0.2
1.2
V
Drain cut-off current
IDSS
VDS = 7.5 V, VGS = 0 V
10
μA
Gate-source leakage current
IGSS
VGS = 3.5 V, VDS = 0 V
5
μA
Load Mismatch
(Note 3)
VDS = 3.6 V, f = 470 MHz,
Pi = 13dBmW,
Po = 27dBmW (VGS = adjust),
VSWR LOAD 10:1 all phase
No Degradation
Note 3: These characteristic values are measured using measurement tools specified by Toshiba.
Output Power Test Fixture
(Test Condition: f
= 470 MHz, VDS = 3.6 V, Iidle = 50 mA, Pi = 13 dBmW)
Pi
PO
C1
C2
C6
ZG = 50 Ω
C10
L2
C8
L1
R1
VGS
VDS
C4
C5
C7
ZL = 50 Ω
C1: 7 pF
C2: 10 pF
C3: 5 pF
C4: 13 pF
C5: 8 pF
C6: 2200 pF
C7: 2200 pF
C8: 10000 pF
C9: 2200 pF
C10: 10000 pF
L1:
φ0.6 mm enamel wire, 5.5ID, 5T
L2:
φ0.6 mm enamel wire, 5.5ID, 7T
R1: 6.8 k
Ω
R2: 56
Ω
C3
C9
R2
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相關代理商/技術參數 |
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|---|---|
| 2SK3658(TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-Channel 60V 2A SOT89 |
| 2SK3659-AZ | 制造商:Renesas Electronics Corporation 功能描述: 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 20V 65A 3-Pin(3+Tab) TO-220 |
| 2SK365-BL(F) | 制造商:Toshiba 功能描述:Nch -50V 6mA to 14mA 80@10mV MINI Bulk 制造商:Toshiba 功能描述:Trans JFET N-CH 3-Pin Mini |
| 2SK365-GR(F) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK3662(F) | 制造商:Toshiba 功能描述:Nch 60V 35A 0.0125@10V TO220NIS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 60V 35A TO220NIS |
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