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參數(shù)資料
| 型號： | 2SK371-V |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 198K |
| 代理商： | 2SK371-V |
2SK371
2003-03-26
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK371
For Low Noise Audio Amplifier Applications
Suitable for use as first stage for equalizer and MC head amplifiers.
High |Yfs|: |Yfs| = 40 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 5 mA)
High breakdown voltage: VGDS = 40 V
Super low noise: NF = 1.0dB (typ.)
(VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 100 )
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-40
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-40
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
5.0
30
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.3
-1.2
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz,
(typ.: IDSS = 5 mA)
25
40
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
75
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
15
pF
NF (1)
VDS = 10 V, RG = 100 W, ID = 5 mA,
f
= 100 Hz
5
10
Noise figure
(Note 2)
NF (2)
VDS = 10 V, RG = 100 W, ID = 5 mA,
f
= 1 kHz
1
2
dB
Note 1: IDSS classification GR: 5.0~10.0 mA, BL: 8.0~16.0 mA, V: 14.0~30.0 mA
Note 2: Use this in the low voltage region (VDS < 15 V) for low noise applications.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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