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參數(shù)資料
| 型號： | 2SK365 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | 2-4E1C, 3 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 180K |
| 代理商： | 2SK365 |
2SK365
2003-03-26
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK365
For Audio Amplifier, Analog-Switch, Constant Current
and Impedance Converter Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
Low RDS (ON): RDS (ON) = 80 (typ.) (IDSS = 5 mA)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note 1)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.25
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz (Note 2)
5.0
19
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Drain-source ON resistance
RDS (ON)
VDS = 10 mV, VGS = 0
(Note 2)
80
W
Note 1: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Note 2: Condition of the typical value IDSS = 5 mA
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-4E1C
Weight: 0.13 g (typ.)
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