參數(shù)資料
型號(hào)： 2SK3640
廠商： NEC Corp.
英文描述： SWITCHING N-CHANNEL POWER MOSFET
中文描述： 開關(guān)N溝道功率MOSFET
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 164K
代理商： 2SK3640
Data Sheet D15968EJ3V0DS
2
2SK3640
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±16 V, V
DS
= 0 V
±10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
Note
| y
fs
|
V
DS
= 10 V, I
D
= 9 A
3.7
7.4
S
R
DS(on)1
V
GS
= 10 V, I
D
= 9 A
15
21
m
Drain to Source On-state Resistance
Note
R
DS(on)2
V
GS
= 4.5 V, I
D
= 9 A
24
40
m
Input Capacitance
C
iss
570
pF
Output Capacitance
C
oss
160
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
100
pF
Turn-on Delay Time
t
d(on)
7.7
ns
Rise Time
t
r
4.7
ns
Turn-off Delay Time
t
d(off)
24
ns
Fall Time
t
f
V
DD
= 15 V, I
D
= 9 A
V
GS
= 10 V
R
G
= 10
7
ns
Total Gate Charge
Q
G
14
nC
Gate to Source Charge
Q
GS
2.4
nC
Gate to Drain Charge
Q
GD
V
DD
= 24 V
V
GS
= 10 V
I
D
= 19 A
4.3
nC
Body Diode Forward Voltage
Note
V
F(S-D)
I
F
= 19 A, V
GS
= 0 V
0.95
V
Reverse Recovery Time
t
rr
I
F
= 19 A, V
GS
= 0 V
21
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
12
nC
Note
Pulsed: PW
≤
350
μ
s, Duty Cycle
≤
2%
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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