參數(shù)資料
型號: 2SK3639
廠商: NEC Corp.
英文描述: SWITCHING N-CHANNEL POWER MOSFET
中文描述: 開關(guān)N溝道功率MOSFET
文件頁數(shù): 5/7頁
文件大?。?/td> 148K
代理商: 2SK3639
Data Sheet D15967EJ3V0DS
5
2SK3639
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
R
D
0
2.5
5
7.5
10
12.5
- 50 - 25
0
25
50
75
100 125 150
I
D
= 32 A
Pulsed
10 V
V
GS
= 4.5 V
T
ch
- Channel Temperature - °C
C
i
,
o
,
r
10
100
1000
10000
0.01
0.1
1
10
100
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
t
d
,
r
,
d
,
f
1
10
100
1000
0.1
1
10
100
t
r
t
d(off)
t
d(on)
t
f
V
DD
= 10 V
V
GS
= 10 V
R
G
= 10
I
D
- Drain Current - A
V
D
0
4
8
12
16
20
0
10
20
30
40
50
0
2
4
6
8
10
V
DS
V
DD
= 16 V
10 V
I
D
= 64 A
V
GS
Q
G
- Gate Charge - nC
V
G
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I
F
0.01
0.1
1
10
100
1000
0
0.5
1
1.5
V
GS
= 10 V
0 V
Pulsed
V
F(S-D)
- Source to Drain Voltage - V
t
r
1
10
100
1000
0.1
1
10
100
di/dt = 100 A/
μ
s
V
GS
= 0 V
I
F
- Diode Forward Current - A
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