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參數(shù)資料
| 型號(hào)： | 2SK3467-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | PROFET™: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; R<sub>ON</sub> @ Tj = 25°C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a. |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 67K |
| 代理商： | 2SK3467-ZK |
Data Sheet D14991EJ1V0DS
2
2SK3467
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate voltage Drain Current
I
DSS
V
DS
= 20 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 40 A
20
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 40 A
4.8
6.0
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 40 A
6.7
9.5
m
Input Capacitance
C
iss
V
DS
= 10 V
2800
pF
Output Capacitance
C
oss
V
GS
= 0 V
1200
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
600
pF
Turn-on Delay Time
t
d(on)
V
DD
= 10 V , I
D
= 40 A
16
ns
Rise Time
t
r
V
GS(on)
= 10 V
23
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
74
ns
Fall Time
t
f
31
ns
Total Gate Charge
Q
G
V
DD
= 16 V
55
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
9
nC
Gate to Drain Charge
Q
GD
I
D
= 80 A
17
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 80 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 80 A, V
GS
= 0 V
44
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
40
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
10%
90%
10%
0
V
DS
90%
t
d(on)
t
r
t
d(off)
t
f
τ
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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