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參數(shù)資料
| 型號(hào)： | 2SK3479-ZJ |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 76K |
| 代理商： | 2SK3479-ZJ |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000, 2001
MOS FIELD EFFECT TRANSISTOR
2SK3479
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No.
Date Published
Printed in Japan
D15077EJ1V0DS00 (1st edition)
July 2001 NS CP(K)
DESCRIPTION
The 2SK3479 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 11
m
MAX. (V
GS
= 10
V, I
D
= 42
A)
R
DS(on)2
= 13
m
MAX. (V
GS
= 4.5
V, I
D
= 42
A)
Low C
iss
: C
iss
= 11000
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
100
±
20
±
83
±
332
125
1.5
150
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
–55 to +150
I
AS
E
AS
65
422
A
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1%
2.
Starting T
ch
= 25°C, R
G
= 25
,
V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3479
TO-220AB
2SK3479-S
TO-262
2SK3479-ZJ
TO-263
2SK3479-Z
TO-220SMD
Note
Note
TO-220SMD package is produced only
in Japan.
(TO-220AB)
(TO-262)
(TO-263, TO-220SMD)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3479 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3480 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3480-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3480-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3480-ZJ | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3479-ZJ-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3479-ZJ-E1-AZ | 功能描述:MOSFET N-CH 100V 83A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3480 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3480-AZ | 功能描述:MOSFET N-CH 100V MP-25/TO-220 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3480-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
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