參數(shù)資料
型號: 2SK3467-ZK
廠商: NEC Corp.
英文描述: PROFET&#153;: Smart High Side Switches; Package: PG-DSO-36; Channels: 8.0; R<sub>ON</sub> @ Tj = 25&#176;C : 200.0 mOhm; Recommended Operating Voltage Range: 11.0 - 45.0 V; IL(SC): 3.0 A; Diagnostic: n.a.
中文描述: 開關(guān)N溝道功率MOSFET的工業(yè)用
文件頁數(shù): 1/8頁
文件大?。?/td> 67K
代理商: 2SK3467-ZK
2001
MOS FIELD EFFECT TRANSISTOR
2SK3467
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
Date Published
Printed in Japan
D14991EJ1V0DS00 (1st edition)
March 2001 NS CP(K)
DATA SHEET
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3467 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 6.0 m
MAX. (V
GS
= 10 V, I
D
= 40 A)
Low gate charge
Q
G
= 55 nC TYP. (I
D
= 80 A, V
DD
= 16 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
V
DSS
V
GSS
20
±
20
V
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
80
A
Drain Current (Pulse)
Note
I
D(pulse)
±
320
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
76
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
10
μ
s, Duty Cycle
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3467
TO-220AB
2SK3467-ZK
TO-263(MP-25ZK)
(TO-220AB)
(TO-263)
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2SK3469 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N CHANNEL SILICON POWER MOSFET