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參數(shù)資料
| 型號： | 2SK3453 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 700 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-16F1B, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 204K |
| 代理商： | 2SK3453 |
2SK3453
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
2SK3453
Switching Regulator Applications
Low drain-source ON resistance: RDS (ON) = 0.72 (typ.)
High forward transfer admittance: |Yfs| = 7.0 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 700 V)
Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
700
V
Drain-gate voltage (RGS = 20 k)
VDGR
700
V
Gate-source voltage
VGSS
±30
V
DC
(Note 1)
ID
10
Drain current
Pulse
(Note 1)
IDP
30
A
Drain power dissipation (Tc
= 25°C)
PD
80
W
Single pulse avalanche energy
(Note 2)
EAR
420
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
8
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.56
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
41.6
°C/W
Note 1:
Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 7.5 mH, RG = 25 , IAR = 10 A
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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