- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48162 > 2SK3557-7 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET PDF資料下載
參數(shù)資料
| 型號： | 2SK3557-7 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | CP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 34K |
| 代理商： | 2SK3557-7 |
2SK3557
No.7169-1/4
Applications
AM tuner RF amplifier.
Low noise amplifier.
Features
Large
yfs.
Small Ciss.
Ultrasmall-sized package permitting 2SK3557-
applied sets to be made smaller and slimer.
Ultralow noise figure.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7169
2SK3557
Package Dimensions
unit : mm
2050A
[2SK3557]
N-Channel Junction Silicon FET
Low-Noise HF Amplifier Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSX
15
V
Gate-to-Drain Voltage
VGDS
--15
V
Gate Current
IG
10
mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG=--10A, VDS=0
--15
V
Gate Cutoff Current
IGSS
VGS=--10V, VDS=0
--1.0
nA
Cutoff Voltage
VGS(off)
VDS=5V, ID=100A
--0.3
--0.7
--1.5
V
Marking : IR
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
60502 TS IM TA-3622
Preliminary
1 : Source
2 : Drain
3 : Gate
SANYO : CP
0.4
0.95 0.95
1.9
2.9
0.5
1.5
2.5
0.5
0.16
0 to 0.1
0.8
1.1
2
3
1
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3559 | 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3563 | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK366-BL | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK366-V | N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK368 | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3557-7-TB-E | 功能描述:MOSFET LOW-FREQUENCY AMPLIFIER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
發(fā)布緊急采購，3分鐘左右您將得到回復。