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參數(shù)資料
| 型號(hào)： | 2SK3559 |
| 廠商： | PANASONIC CORP |
| 元件分類： | JFETs |
| 英文描述： | 30 A, 230 V, 0.074 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TOP3F-B1, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 27K |
| 代理商： | 2SK3559 |
2SK3559
N-channel enhancement mode MOSFET
High speed switching
Silicon MOSFET
Absolute Maximum Ratings
Unit : mm
TOP-3F-B1
Parameter
Symbol
Rating
Unit
VDSS
VGSS
IDP
PD
Tj
Tstg
-55 to +150
150
3
100
120
30
230
V
A
W
°C
*1
*2
Electrical Characteristics (Tc = 25
± 3 °C)
Parameter
Condition
Unit
Typ
Min
Max
*1 : Tc = 25
°C
*2 : Ta = 25
°C (Without heat sink )
Drain Cutoff Current
Gate-source Leakage Current
Forward Transfer Admittance
Diode Forward Voltage
Output Capacitance
Reverse Transfer Capacitance
Turn-on delay time
Turn-off delay time
Rise time
Fall time
A
V
100
± 1
74
-1.5
IDSS
IGSS
VDSS
Vth
Yfs
tr
td (off)
tf
VDS = 184V, VGS = 0
VGS =
± 30 V, VDS = 0
ID = 1 mA, VGS = 0
VDS = 25 V, ID = 1 mA
VDD = 100V, ID = 15 A
RL = 6.7
, VGS = 10 V
°C
A
VGS = 10 V, ID = 15 A
VDS = 25 V, ID = 15 A
IDR = 30 A, VGS = 0
ID
RDS (on)
Input Capacitance
Drain-source on Resistance
Drain-source Breakdown Voltage
Gate Threshold Voltage
td (on)
Crss
Coss
Ciss
VDSF
Symbol
n s
V
p F
V
S
m
4
230
2
8
55
16
3170
440
35
36
25
217
35
VDS = 25 V, VGS = 0,
f = 1MHz
Drain-Source breakdown voltage
Gate-Source voltage
Drain current
DC
Pulse
Tc = 25
°C
Ta = 25
°C
Allowable power
dissipation
Junction temperature
Storage temperature
15.0±0.3
5.0±0.2
11.0±0.2
2.0±0.2
2.0±0.1
0.6±0.2
1.1±0.1
5.45±0.3
10.9±0.5
123
21.0
±
0.5
16.2
±
0.5
Solder
Dip
(2.3)
(3.2)
15.0
±
0.2
(0.7)
φ 3.2±0.1
(3.2)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3561 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(Q,M) | 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3561(STA4,Q,M) | 制造商:Toshiba 功能描述:TRANSISTOR |
| 2SK3561Q | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 8A 3-Pin(3+Tab) TO-220NIS |
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