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參數(shù)資料
| 型號： | 2SK368-O |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | 2-3F1B, TO-236MOD, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 143K |
| 代理商： | 2SK368-O |
2SK368
2003-03-26
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK368
Audio Frequency and High Voltage Amplifier Applications
Constant Current Applications
High breakdown voltage: VGDS = 100 V (min)
High input impedance: IGSS = 1.0 nA (max) (VGS = 80 V)
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-100
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -80 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-100
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
0.6
6.5
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.4
-3.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
4.6
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF
VDS = 10 V, VGS = 0
RG = 100 kW, f = 100 Hz
0.5
dB
Note: IDSS classification O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR (G): 2.6~6.5 mA
Marking
Unit: mm
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK368-Y(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
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| 2SK3691-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3693-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3696-01MR | 制造商:Fuji Electric 功能描述: |
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