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參數(shù)資料
| 型號： | 2SK3737-6 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 30 mA, 15 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | MCP, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 29K |
| 代理商： | 2SK3737-6 |
2SK3737
No.8390-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8390
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
71505AD MS IM TB-00001592
2SK3737
N-Channel Silicon MOSFET
FM Tuner, VHF Amplifier Applications
Features
Low noise.
High power gain.
Small reverse transfer capacitance.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDS
15
V
Gate-to-Source Voltage
VGS
±5V
Drain Current
ID
30
mA
Allowable Power Dissipation
PD
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Voltage
VDSX
VGS=--4V, ID=100A15
V
Gate-to-Source Leakage Current
IGSS
VDS=0V, VGS=±5V
±10
nA
Zero-Gate Voltage Drain Current
IDSS
VDS=10V, VGS=0V
6.0*
12*
mA
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
--2.2
V
Forward Transfer Admittance
yfs
VDS=10V, VGS=0V, f=1kHz
11
16
mS
Input Capacitance
Ciss
VDS=10V, VGS=0V, f=1MHz
2.4
pF
Reverse Transfer Capacitance
Crss
VDS=10V, VGS=0V, f=1MHz
0.035
pF
Power Gain
PG
VDS=10V, VGS=0V, f=100MHz
35
dB
See specified Test Circuit.
Noise Figure
NF
VDS=10V, VGS=0V, f=100MHz
2.0
dB
See specified Test Circuit.
Marking : KA
* : The 2SK3737 is classified by IDSS as follows (unit : mA) :
Rank
5
6
IDSS
6 to 10
8 to 12
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3737-6-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH.HF 15V 0.03A SOT323 |
| 2SK3738-TL-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風(fēng)格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK3740-ZK-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,FET,Nch,250V/20A,TO263 |
| 2SK3742 | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3742(Q) | 功能描述:MOSFET N-Ch 900V 5A Rdson 2.5 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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