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參數(shù)資料
| 型號： | 2SK3424-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SK3424-ZK |
Data Sheet D14640EJ2V0DS
2
2SK3424
ELECTRICAL CHARACTERISTICS(T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 24 A
13
S
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 24 A
7.7
11.5
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 24 A
10.5
17.0
m
Input Capacitance
C
iss
V
DS
= 10 V
1900
pF
Output Capacitance
C
oss
V
GS
= 0 V
580
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
270
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V , I
D
= 24 A
14
ns
Rise Time
t
r
V
GS(on)
= 10 V
13
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
61
ns
Fall Time
t
f
22
ns
Total Gate Charge
Q
G
V
DD
= 24 V
34
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
6.4
nC
Gate to Drain Charge
Q
GD
I
D
= 48 A
9.1
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 48 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 48 A, V
GS
= 0 V
34
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
26
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1%
V
GS
Wave Form
V
DS
Wave Form
V
GS
10%
90%
10%
0
V
DS
90%
t
d(on)
t
r
t
d(off)
t
f
τ
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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