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參數(shù)資料
| 型號(hào)： | 2SK3424-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 67K |
| 代理商： | 2SK3424-ZK |
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3424
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No.
Date Published
Printed in Japan
D14640EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
DATA SHEET
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3424 is N-Channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as
DC/DC converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 11.5 m
MAX. (V
GS
= 10 V, I
D
= 24 A)
Low gate charge
Q
G
= 34 nC TYP. (I
D
= 48 A, V
DD
= 24 V, V
GS
= 10 V)
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
V
DSS
V
GSS
30
±
20
V
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
48
A
Drain Current (Pulse)
Note
I
D(pulse)
±
192
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
50
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Note
PW
≤
10
μ
s, Duty Cycle
≤
1%
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3424
TO-220AB
2SK3424-ZK
TO-263(MP-25ZK)
2SK3424-ZJ
TO-263(MP-25ZJ)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3426 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Impedance Conversion In Low Frequency |
| 2SK34260TL | 功能描述:JFET N-CH 20V 2MA SSSMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開(kāi)）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK3427 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction |
| 2SK3430 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3430-AZ | 制造商:Renesas Electronics 功能描述:Nch 40V 80A 7.3m@10V TO220AB Bulk 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 40V 80A 3-Pin(3+Tab) TO-220AB Cut Tape |
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