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參數(shù)資料
| 型號： | 2SK3431 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SK3431 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1999, 2000
MOS FIELD EFFECT TRANSISTOR
2SK3431
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
PRELIMINARY DATA SHEET
Document No.
Date Published
Printed in Japan
D14600EJ1V0DS00 (1st edition)
March 2000 NS CP(K)
DESCRIPTION
The 2SK3431 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance:
R
DS(on)1
= 5.6
m
MAX. (V
GS
= 10
V, I
D
= 42
A)
R
DS(on)2
= 8.9
m
MAX. (V
GS
= 4
V, I
D
= 42
A)
Low C
iss
: C
iss
= 6100
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage
V
DSS
40
V
Gate to Source Voltage
V
GSS
±
20
V
Drain Current (DC)
Drain Current (pulse)
Note1
I
D(DC)
±
83
A
I
D(pulse)
±
332
A
Total Power Dissipation (T
C
= 25°C)
P
T
100
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
65
A
E
AS
423
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting T
ch
= 25 °C, R
G
= 25
,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
Rth(ch-C)
1.25
°
C/W
Channel to Ambient
Rth(ch-A)
83.3
°
C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3431
TO-220AB
2SK3431-S
TO-262
2SK3431-Z
TO-220SMD
(TO-220AB)
(TO-262)
(TO-220SMD)
#
The mark
#
shows major revised points.
#
#
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3431-S | Switching N-channel power MOS FET industrial use |
| 2SK3431-Z | Switching N-channel power MOS FET industrial use |
| 2SK3432 | Switching N-channel power MOS FET industrial use |
| 2SK3432-S | Switching N-channel power MOS FET industrial use |
| 2SK3432-Z | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3431-AZ | 制造商:Renesas Electronics 功能描述:Nch 40V 83A 5.6m@10V TO220AB Bulk |
| 2SK3431-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3431-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3431-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 40V 83A 5.6m@10V TO220SMD Bulk |
| 2SK3431-Z-E1-AZ | 功能描述:MOSFET N-CH 40V 83A TO220AB 制造商:renesas electronics america 系列:- 包裝:管件 零件狀態(tài):有效 FET 類型:MOSFET N 通道，金屬氧化物 FET 功能:標(biāo)準(zhǔn) 漏源極電壓（Vdss）:40V 電流 - 連續(xù)漏極（Id）（25°C 時）:83A（Tc） 不同?Id，Vgs 時的?Rds On（最大值）:5.6 毫歐 @ 42A，10V 不同 Id 時的 Vgs（th）（最大值）:- 不同 Vgs 時的柵極電荷（Qg）:110nC @ 10V 不同 Vds 時的輸入電容（Ciss）:6100pF @ 10V 功率 - 最大值:1.5W 工作溫度:150°C（TJ） 安裝類型:通孔 封裝/外殼:TO-220-3 供應(yīng)商器件封裝:TO-220AB 標(biāo)準(zhǔn)包裝:1,000 |
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