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參數(shù)資料
| 型號(hào)： | 2SK3418-E |
| 元件分類： | JFETs |
| 英文描述： | 85 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220AB, 3 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | 2SK3418-E |
2SK3418
Rev.2.00 Sep. 10, 2004 page 2 of 7
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
60
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
——
10
AVDS = 60 V, VGS = 0
Gate to source leak current
IGSS
——
±0.1
AVGS = ±20 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
VDS = 10 V, ID = 1 mA
Note1
Forward transfer admittance
|yfs|55
90
—
S
ID = 45 A, VDS = 10 V
Note1
RDS(on)
—4.3
5.5
m
ID = 45 A, VGS= 10 V
Note1
Static drain to source on state
resistance
RDS(on)
—6.0
9.0
m
ID = 45 A, VGS=4 V
Note1
Input capacitance
Ciss
—
9770
—
pF
Output capacitance
Coss
—
1340
—
pF
Reverse transfer capacitance
Crss
—
470
—
pF
VDS = 10 V
VGS = 0
f = 1 MHz
Total gate charge
Qg
—
180
—
nC
Gate to source charge
Qgs
—
32
—
nC
Gate to drain charge
Qgd
—
36
—
nC
VDD = 50 V
VGS = 10 V
ID = 85 A
Turn-on delay time
td(on)
—53—
ns
Rise time
tr
—
320
—
ns
Turn-off delay time
td(off)
—
700
—
ns
Fall time
tf
—
380
—
ns
VGS = 10 V
ID= 45 A
RL = 0.67
Body-drain diode forward voltage
VDF
—1.0
—
V
IF = 85 A, VGS = 0
Body-drain diode reverse recovery
time
trr
—70—
ns
IF = 85 A, VGS = 0
diF / dt = 50 A /
s
Note:
1. Pulse test
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