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參數(shù)資料
| 型號： | 2SK3580-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOSFET |
| 中文描述： | 15 A, 300 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SK3580-01MR |
1
TO-220F
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
300
VDSX *5
270
Continuous drain current
ID
±15
Pulsed drain current
ID(puls]
±60
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
15
Maximum Avalanche Energy
EAS*1
155
Maximum Drain-Source dV/dt
dVDS/dt *4
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
2.16
Tc=25°C
48
Operating and storage
Tch
+150
temperature range
Tstg
Isolation Voltage
VISO *6
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3580-01MR
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=300V VGS=0V
VDS=240V VGS=0V
VGS=±30V
ID=6A
VDS=25V
VCC=150V ID=6A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
2.6
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=150V
ID=12A
VGS=10V
L=1.0mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
300
3.5
4.5
25
250
10
100
0.22
0.28
5
10.5
980
1470
170
255
5.5
11
14.5
29
6.5
9.8
28
42
46
23
34.5
9.7
14.6
5.6
11.2
15
1.20
1.80
0.2
1.80
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150°C
<
<<
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
VGS=10V
200304
*1 L=1.2mH, Vcc=48V, See to Avalanche Energy Graph
*2 Tch=150°C
<
=
<
*4 VDS 300V
*5 VGS=-30V
*6 t=60sec f=60Hz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| 2SK3580-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 19 Milliohms;ID +/-73A;TO-220AB;PD 270W;-55 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB 制造商:Fuji Electric 功能描述:MOSFET, N, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:73A; Drain Source Voltage Vds:100V; On Resistance Rds(on):25mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:270W ;RoHS Compliant: Yes |
| 2SK3586-01 | 制造商:Fuji Electric 功能描述:MOSFET N TO-220AB |
| 2SK3586-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3587-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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