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參數(shù)資料
| 型號(hào)： | 2SK3451-01 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof |
| 中文描述： | 高速開關(guān)阻抗低，無(wú)二次breadown低動(dòng)力雪崩防 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 107K |
| 代理商： | 2SK3451-01 |
1
Item
Symbol
Ratings
Unit
Drain-source voltage
VDS
600
Continuous drain current
ID
±13
Pulsed drain current
ID(puls]
±52
Gate-source voltage
VGS
±30
Repetitive or non-repetitive
IAR *2
13
Maximum Avalanche Energy
EAS*1
216.7
Maximum Drain-Source dV/dt
dVDS/dt
20
Peak Diode Recovery dV/dt
dV/dt *3
5
Max. power dissipation
PD
Ta=25°C
2.16
Tc=25°C
80
Operating and storage
Tch
+150
temperature range
Tstg
Isolation Voltage
VISO *4
2
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermalcharacteristics
2SK3451-01MR
FUJI POWER MOSFET200303
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol
Test Conditions
Zero gate voltage drain current
IDSS
VDS=600V VGS=0V
VDS=480V VGS=0V
VGS=±30V
ID=6A
VGS=10V
ID=6A
VDS=25V
VCC=300V ID=6A
VGS=10V
RGS=10
Min.
Typ.
Max.
Units
V
A
nA
S
pF
nC
A
V
s
C
ns
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
channel to case
Rth(ch-a)
channel to ambient
1.56
58.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
IAV
VSD
trr
Qrr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time ton
Turn-off time toff
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
ID=250A
VGS=0V
ID= 250A
VDS=VGS
Tch=25°C
Tch=125°C
VDS=0V
VDS=25V
VGS=0V
f=1MHz
VCC=300V
ID=12A
VGS=10V
L=2.36mH Tch=25°C
IF=12A VGS=0V Tch=25°C
IF=12A VGS=0V
-di/dt=100A/s
Tch=25°C
V
A
V
A
mJ
kV/s
W
°C
kVrms
600
3.0
5.0
25
250
10
100
0.50
0.65
5.5
11
1600
2400
160
240
7
10.5
18
27
16
24
35
50
815
34
51
12.5
19
11.5
17.5
13
1.00
1.50
0.75
6.5
-55 to +150
Outline Drawings [mm]
*3 IF=-ID, -di/dt=50A/s, Vcc=BVDSS, Tch=150°C *4 t=60sec, f=60Hz
<
<<
Gate(G)
Source(S)
Drain(D)
Super FAP-G Series
TO-220F
Equivalent circuit schematic
*1 L=2.36mH, Vcc=60V, See to Avalanche Energy Graph
*2 Tch=150°C
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