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參數(shù)資料
| 型號(hào)： | 2SK3408 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管開關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK3408 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2000
MOS FIELD EFFECT TRANSISTOR
2SK3408
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No.
Date Published
Printed in Japan
D15016EJ3V0DS00 (3rd edition)
April 2001 NS CP(K)
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
FEATURES
Can be driven by a 4-V power source
Low on-state resistance
R
DS(on)1
= 195 m
MAX. (V
GS
= 10
V, I
D
= 0.5
A)
R
DS(on)2
= 250 m
MAX. (V
GS
= 4.5
V, I
D
= 0.5 A)
R
DS(on)3
= 260 m
MAX. (V
GS
= 4.0
V, I
D
= 0.5 A)
Built-in G-S protection diode against ESD.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3408
SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Drain to Gate Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
V
DSS
V
DGS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
43
±
5
43
±
5
±20
±1.0
±4.0
0.2
1.25
150
V
V
V
A
A
W
W
°C
°C
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Note2
Channel Temperature
Storage Temperature
–55 to +150
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on FR-4 Board, t
≤
5
sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
0.65
0.9 to 1.1
0 to 0.1
0.16
+0.1
–
0.06
2
1
0.95
1
2
3
1.9
2.9 ±0.2
0.4
+0.1
–
0.05
0.95
0
+
–
0
1
: Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Marking: XF
Gate
Drain
The mark
#
shows major revised points.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3418 | 2SK3418 |
| 2SK3424 | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZJ | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3424-ZK | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3431 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3408(0)-T1B-A | 制造商:Renesas Electronics Corporation 功能描述:SINGLE MOSFET - Bulk |
| 2SK3408-T1B | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3408-T1B-A | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,43V,1.0A,0.155ohm,SC-96MM 制造商:Renesas 功能描述:Trans MOSFET N-CH 48V 1A 3-Pin SC-96 T/R |
| 2SK3411 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SK3412 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
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