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參數(shù)資料
| 型號(hào)： | 2SK3309(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S2B, 3 PIN |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | 2SK3309(2-10S2B) |
2SK3309
2006-11-06
4
Drain
po
wer
di
ssip
ation
P
D
(W)
Gate
th
resh
old
vol
tage
V
th
(V)
Case temperature Tc
(°C)
RDS (ON) – Tc
Drain-
sou
rce
on
re
sis
tan
ce
R
DS
(ON)
(
Ω
)
Drain-source voltage VDS (V)
IDR – VDS
Drain
re
ver
se
cur
re
nt
I DR
(A)
Drain-source voltage VDS (V)
Capacitance – VDS
C
ap
aci
ta
nc
e
C
(p
F
)
Case temperature Tc
(°C)
Vth – Tc
Case temperature Tc
(°C)
PD – Tc
Gate-
sour
ce
volt
ag
e
V
GS
(V)
Total gate charge Qg (nC)
Dynamic input/output characteristics
Drain-
sou
rce
volt
ag
e
V
DS
(V)
0
20
60
40
100
80
200
0
40
80
120
160
500
400
0
100
200
300
0
10
20
30
50
40
Common source
ID = 10 A
Tc
= 25°C
Pulse test
VDS
360
180
VGS
VDD = 90 V
0
4
8
12
20
16
160
0
1
3
2
6
5
4
80
40
0
40
80
120
Common source
VDS = 10 V
ID = 1 mA
Pulse test
0
0.01
0.4
0.1
1
10
100
0.6
0.8
1.2
5
0.2
1
10
1
3
VGS = 0, 1 V
Common source
Tc
= 25°C
Pulse test
1
0.1
10
100
1000
10000
1
10
100
1000
Common
source
VGS = 0 V
f
= 1 MHz
Ciss
Coss
Crss
2.0
1.2
0
80
40
0
40
80
160
120
0.4
0.8
ID = 10 A
2.5
5
1.6
Common source
VGS = 10 V
Pulse test
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|---|---|
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