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參數(shù)資料
| 型號： | 2SK3309(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 225K |
| 代理商： | 2SK3309(2-10S2B) |
2SK3309
2006-11-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
±10
μA
Gate -source breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
100
μA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
550
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
0.48
0.65
Ω
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 A
1.5
4.3
S
Input capacitance
Ciss
920
Reverse transfer capacitance
Crss
12
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
140
pF
Rise time
tr
25
Turn-on time
ton
35
Fall time
tf
10
Switching time
Turn-off time
toff
60
ns
Total gate charge
Qg
23
Gate-source charge
Qgs
9
Gate-drain charge
Qgd
VDD 360 V, VGS = 10 V, ID = 10 A
14
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
10
A
Pulse drain reverse current
(Note 1)
IDRP
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
1.7
V
Reverse recovery time
trr
280
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/μs
2.7
μC
Marking
※
Type
K3309
※
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 μs
0 V
10 V
VGS
RL = 40 Ω
VDD 200 V
ID = 5 A
VOUT
10
Ω
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