- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄48161 > 2SK3290 SMALL SIGNAL, FET PDF資料下載
參數(shù)資料
| 型號： | 2SK3290 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MODIFIED TO-236, 3 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3290 |
2SK3290
4
0.5
0.4
0.3
0.2
0.1
0
24
6
8
10
0.1
0.5
0.2
5
2
1.0
0.2
0.5
0.1
2.0
1.6
1.2
0.8
0.4
–40
0
40
80
120
160
0
1.0
I
= 500mA
D
100m A
Pulse Test
V
= 4V
GS
10 V
Pulse Test
V
= 4V
GS
10 V
I
= 500m A
D
100m A, 250m A, 500m A
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Static Drain to Source on State
Resistance vs. Drain Current
Case Temperature
Tc
( °C)
Static
Drain
to
Source
on
State
Resistance
()
DS(on)
Static Drain to Source on State
Resistance vs. Temperature
Drain Current I
(A)
D
Forward Transfer Admittance
vs. Drain Current
|yfs|
(S)
Forward
Transfer
Admittance
250m A
0.05
100m A, 250m A
0.1
0.2
0.5
1.0
5
2
1.0
0.2
0.5
0.1
0.05
75 °C
25 °C
Tc = –25 °C
V
= 10 V
Pulse Test
DS
Static
Drain
to
Source
on
StateResistance
()
DS(on)
R
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3290 | 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3299-S | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3299-ZJ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3309(2-10S2B) | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3371(2-7J1B) | 1 A, 600 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3290BNTL | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3291 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3292 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3293 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3294 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。