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參數(shù)資料
| 型號： | 2SK3290 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | SMALL SIGNAL, FET |
| 封裝： | MODIFIED TO-236, 3 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 39K |
| 代理商： | 2SK3290 |
2SK3290
3
Main Characteristics
0.1
1.0
10
50
2.0
1.6
1.2
0.8
0.4
0
2
468
10
2.0
1.6
1.2
0.8
0.4
0
24
68
10
800
600
400
200
0
50
100
150
200
V
= 3 V
GS
Tc = –25°C
75°C
Pulse Test
V
= 10 V
Pulse Test
DS
5
1.0
0.1
0.01
0.001
PW
=
10
ms
(1
shot)
DC
Operation
5V
4 V
7 V
6 V
25°C
Drain to Source Voltage
V
(V)
DS
Maximum Safe Operation Area
Drain
Current
I
(A)
D
Typical Outout Characteristics
Drain to Source Voltage
V
(V)
DS
Gate to Source Voltage
V
(V)
GS
Typical Transfer Characteristics
Operation in this area
is limited by RDS)on)
Channel
Dissipation
*Pch
(mW)
Ambient Temperature
Ta ( °C)
Power vs. Temperature Derating
Drain
Current
I
(A)
D
Drain
Current
I
(A)
D
10 s
100 s
1 ms
Value on the alumina ceramic boad.(12.5x20x0.7mm)
*Value on the alumina ceramic boad (12.5x20x0.7mm)
Ta=25 °C
0.05
0.2
0.5
2
5
20
0.0005
0.002
0.005
0.02
0.05
0.2
0.5
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3290 | 500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SK3299-S | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA |
| 2SK3299-ZJ | 10 A, 600 V, 0.75 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 2SK3309(2-10S2B) | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3371(2-7J1B) | 1 A, 600 V, 9 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3290BNTL | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3291 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3292 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3293 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3294 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
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