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參數(shù)資料
| 型號： | 2SK3212-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK3212-E |
2SK3212
Rev.3.00 Sep 07, 2005 page 5 of 7
Pulse Width
PW (S)
Normalized
Transient
Thermal
Impedance
γ s
(t)
Normalized Transient Thermal Impedance vs. Pulse Width
Channel Temperature Tch (
°C)
Repetitive
Avalanche
Energy
E
AR
(mJ)
Maximum Avalanche Energy vs.
Channel Temperature Derating
Source to Drain Voltage
VSD (V)
Reverse
Drain
Current
I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
D. U. T
Rg
IAP
Monitor
VDS
Monitor
VDD
50
Vin
15 V
0
ID
VDS
IAP
V(BR)DSS
L
VDD
EAR =
L I
AP
2
2
1
VDSS
VDSS – VDD
Avalanche Test Circuit
Avalanche Waveform
10
8
6
4
2
0
0.4
0.8
1.2
1.6
2.0
VGS = 0, –5 V
10 V
5 V
10
8
6
4
2
25
50
75
100
125
150
0
Pulse Test
IAP = 10 A
VDD = 50 V
duty < 0.1 %
Rg > 50
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch – c(t) = s (t)
ch – c
ch – c = 6.25
°C/W, Tc = 25°C
θ
γ
θ
Tc = 25
°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot
pulse
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