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參數(shù)資料
| 型號(hào)： | 2SK3212-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁(yè)數(shù)： | 4/8頁(yè) |
| 文件大小： | 94K |
| 代理商： | 2SK3212-E |
2SK3212
Rev.3.00 Sep 07, 2005 page 4 of 7
Case Temperature TC (°C)
Static Drain to Source on State
Resistance vs. Temperature
Static
Drain
to
Source
on
State
Resistance
R
DS
(on)
(m
)
Forward Transfer Admittance
vs. Drain Current
Drain Current ID (A)
Forward
Transfer
Admittance
y
fs
(S)
Body to Drain Diode Reverse
Recovery Time
Reverse Drain Current IDR (A)
Reverse
Recovery
Time
t
rr
(ns)
Typical Capacitance
vs. Drain to Source Voltage
Drain to Source Voltage VDS (V)
Capacitance
C
(pF)
Dynamic Input Characteristics
Gate Charge Qg (nc)
Drain
to
Source
Voltage
V
DS
(V)
Gate
to
Source
Voltage
V
GS
(V)
Switching Characteristics
Switching
Time
t
(ns)
Drain Current ID (A)
500
400
300
200
100
–40
0
40
80
120
160
0
0.1
0.3
1
3
10
30
100
50
20
5
10
1
2
0.5
VGS = 4 V
10 V
1, 2 A
5 A
25
°C
Tc = –25
°C
75
°C
Pulse Test
VDS = 10 V
Pulse Test
1, 2 A
5 A
0.1
0.3
1
3
10
30
100
010
20
30
40
50
2000
5000
1000
100
200
500
200
160
120
80
40
0
20
16
12
8
4
8
1624
3240
0
1000
500
50
100
20
10
200
500
300
30
100
3
10
1
0.1
0.3
1
3
10
30 100
di / dt = 50 A /
s
VGS = 0, Ta = 25°C
10
20
50
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
ID = 5 A
VGS
VDS
VDD = 100 V
50 V
25 V
VDD = 100 V
50 V
25 V
tf
tr
td(on)
td(off)
VGS = 10 V, VDD = 30 V
PW = 5
s, duty < 1 %
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|---|---|
| 2SK3214 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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| 2SK321601 | 制造商:FUJI 功能描述:New |
| 2SK3216-01 | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-CHANNEL SILICON POWER MOS-FET |
| 2SK3216-01SC | 制造商:Fuji Electric 功能描述: |
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