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參數(shù)資料
| 型號(hào)： | 2SK3212-E |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | SC-67, TO-220FM, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK3212-E |
2SK3212
Rev.3.00 Sep 07, 2005 page 2 of 7
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
10
A
Drain peak current
ID(pulse)
Note1
40
A
Body-drain diode reverse drain current
IDR
10
A
Avalanche current
IAP
Note3
10
A
Avalanche energy
EAR
Note3
10
mJ
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW
≤ 10s, duty cycle ≤ 1 %
2. Value at Tc = 25
°C
3. Value at Tch = 25
°C, Rg
≥ 50
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V(BR)DSS
100
—
V
ID = 10 mA, VGS = 0
Gate to source breakdown voltage
V(BR)GSS
±20
—
V
IG =
±100 A, VDS = 0
Gate to source leak current
IGSS
—
±10
A
VGS =
±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
10
A
VDS = 100 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
RDS(on)
—
100
130
m
ID = 5 A, VGS = 10 V
Note4
Static drain to source on state
resistance
RDS(on)
—
130
170
m
ID = 5 A, VGS = 4 V
Note4
Forward transfer admittance
|yfs|
4.5
7.5
—
S
ID = 5 A, VDS = 10 V
Note4
Input capacitance
Ciss
—
420
—
pF
Output capacitance
Coss
—
185
—
pF
Reverse transfer capacitance
Crss
—
100
—
pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn-on delay time
td(on)
—
12
—
ns
Rise time
tr
—
60
—
ns
Turn-off delay time
td(off)
—
105
—
ns
Fall time
tf
—
70
—
ns
ID = 5 A, VGS = 10 V,
RL = 6
Body–drain diode forward voltage
VDF
—
0.9
—
V
IF = 10 A, VGS = 0
Body–drain diode reverse recovery
time
trr
—
90
—
ns
IF = 10 A, VGS = 0
diF/ dt = 50 A/
s
Note:
4. Pulse test
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