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參數(shù)資料
| 型號(hào)： | 2SK3134L-E |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁(yè)數(shù)： | 7/9頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | 2SK3134L-E |
Data Sheet D14753EJ1V0DS
5
2SK3456
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
140
160
20
40
60
80
100
10
30
50
70
90
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120
140
160
120
100
80
60
40
20
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.1
1
10
100
1000
TC = 25C
Single Pulse
110
R
DS(on)
Limited
ID(DC)
ID(pulse)
PW
=
10
s
100
s
1 ms
3 ms
10 ms
30 ms
100 ms
Power Dissipation Limited
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth(t)
-Transient
Thermal
Resistance
-
C
/W
1000
100
0.1
0.001
0.01
1
10
100 m
1
10
100
1000
10
100
1 m
10 m
Rth(ch-C) = 1.25C/W
Rth(ch-A) = 83.3C/W
Single Pulse
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3135S | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3135L | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3135L | 75 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3140 | 60 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3149-E | 20 A, 100 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3134S | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3134STL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3135 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3135(L) | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 75A I(D) | TO-262AA |
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