參數(shù)資料
型號(hào): 2SK3134L-E
元件分類: JFETs
英文描述: 75 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LDPAK-3
文件頁數(shù): 6/9頁
文件大?。?/td> 94K
代理商: 2SK3134L-E
Data Sheet D14753EJ1V0DS
4
2SK3456
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
Tch - Channel Temperature - C
R
DS(on)
-
Drain
to
Source
On-state
Resistance
-
50
1.6
1.4
1.2
1.0
0.6
0.4
0.2
0
50
100
150
0.8
12 A
ID = 6.0 A
VGS = 10 V
Pulsed
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
VSD - Source to Drain Voltage - V
ISD
-
Diode
Forward
Current
-
A
0.01
0
0.1
1
10
0.5
1.0
1.5
100
VGS = 10 V
0 V
Pulsed
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VDS - Drain to Source Voltage - V
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
0.1
100
1000
10000
1
0.1
10
1
10
1000
100
VGS = 0 V
f = 1 MHz
Ciss
Coss
Crss
SWITCHING CHARACTERISTICS
ID - Drain Current - A
td(on)
,t
r,
t
d(off)
,t
f-
Switching
Time
-
ns
10
1
0.1
1
0.1
1000
100
10
100
VDD = 150 V
VGS = 10 V
RG = 10
tf
tr
td(on)
td(off)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
ID - Drain Current - A
trr
-
Reverse
Recovery
Time
-
ns
0.1
10
1
10
100
1000
10000
di/dt = 50 A/ s
VGS = 0 V
V
GS
-
Gate
to
Source
Voltage
-
V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
QG - Gate Charge - nC
V
DS
-
Drain
to
Source
Voltage
-
V
5
101520253035
200
400
600
2
4
6
8
0
10
12
ID = 12 A
VDS
VDD = 400 V
250 V
125 V
VGS
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